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Oral presentation

Rapid temperature oxidation at SiO$$_{2}$$/Si(001) interface studied by real-time X-ray photoelectron spectroscopy; Rapid cooling versus rapid heating

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka; Ishizuka, Shinji*; Takakuwa, Yuji*

no journal, , 

The kinetics of rapid thermal oxidation (RTO) on Si(001) with O$$_{2}$$ was investigated by real-time X-ray photoelectron spectroscopy to monitor the changes of thermal strains and oxide growth rate at the same time. We have found that rapid cooling from 500 to 100 degrees as well as the rapid heating from 300 to 500 degrees have a significant acceleration effect on the oxide growth rate at the SiO$$_{2}$$/Si(001) interface. The observed acceleration was ascribed to the defects (emitted Si atoms + vacancies) generation due to the thermal strain, which is the dissociative adsorption site of O$$_{2}$$ at the SiO$$_{2}$$/Si interface. Based on the observed changes of Si$$alpha$$ and Si$$beta$$, a RTO reaction model is considered in terms of the oxidation-induced and thermal strains present at the SiO$$_{2}$$/Si(001) interface. In future, it is of practical importance to investigate the effect of the temperature-changing rate and temperature difference on the oxide growth acceleration.

Oral presentation

Investigation of Initial Oxide Growth on GaN Epitaxial Films

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Nozaki, Mikito*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

no journal, , 

Initial oxide growth on GaN epitaxial films by thermal oxidation in dry O$$_{2}$$ ambient was investigated by means of synchrotron radiation X-ray photoemission spectroscopy and atomic force microscopy (AFM). High-resolution SR-PES analysis showed that the intensity ratio of O 1s/N 1s core-level peaks for the sample oxidized at 700 degrees is slightly higher than that for the sample after HCl wet-cleaning, indicating that GaN surface is oxidized. However, the O 1s/N 1s intensity ratio was nearly identical with increasing temperature up to 800 degrees and AFM observation revealed the preferential formation of small grains at the dark pits. On the other hand, the O 1s/N 1s intensity ratio drastically increased with further increasing temperature higher than 800 degrees, indicating significantly enhanced oxide formation on GaN surface.

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